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The NSVMMUN2235LT1G is a single NPN digital transistor from the MMUN2235L series, manufactured by onsemi. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-23-3 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical base resistor of 2.2 kOhms and a power dissipation rating of 246 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct configuration. Confirm RoHS compliance status and specific tape-and-reel packaging requirements with authorized distributors prior to ordering. Cross-reference datasheet revisions to confirm pinout consistency.
Select this component when a single NPN digital transistor with a 2.2 kOhm base resistor is required. Ensure the 50 V collector-emitter voltage and 100 mA current ratings exceed circuit demands. Verify that the SOT-23-3 package dimensions fit the printed circuit board layout constraints.
This part belongs to the MMUN2235L family of pre-biased transistors. It serves as a direct replacement for discrete resistor-transistor networks, simplifying design and saving board space. The 'NS' prefix indicates it is an onsemi branded version of the standard MMUN2235L specification.
Compatible substitutes include MMUN2235LT1G and other NPN digital transistors with identical 2.2 kOhm base resistance and 50 V/100 mA ratings in SOT-23-3 packages.