NSVMMUN2236LT1G

Overview

The NSVMMUN2236LT1G is a single NPN Digital Transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external bias resistors. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor within an SOT-23-3 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 246 mW. The device features a typical input resistance of 100 kOhms with a resistor ratio of 1, and a minimum DC current gain (hFE) of 80. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network comprising two resistors to simplify circuit design.
• Reduces board space and component count by eliminating the need for individual external bias components.
• Qualified under AEC-Q101 standards, making it suitable for automotive and other applications requiring unique site control.

Applications

• Automotive electronic systems requiring qualified digital transistors.
• General-purpose switching applications in consumer electronics.
• Interface circuits where simplified biasing reduces board complexity.

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and automotive qualification status. Confirm that the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a single NPN digital transistor with high input impedance is required. The 100 kOhm base resistor makes it suitable for direct interfacing with logic outputs. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 246 mW power dissipation limit in the SOT-23-3 package.

Part Context

This part belongs to the MMUN2236L series of Bipolar Digital Transistors from onsemi. It is functionally similar to other BRTs in the family but distinguished by its specific 100 kOhm base resistance value. The 'NSV' prefix indicates automotive-grade manufacturing controls, while the 'LT1G' suffix denotes the SOT-23-3 tape-and-reel packaging configuration.

Replacement Considerations

Compatible substitutes include other NPN digital transistors with similar VCEO and Ic ratings, such as the MUN2236T1G or equivalent parts from other manufacturers offering SOT-23-3 packaged BRTs with comparable bias resistor values.