NSVMUN2233T1G

NSVMUN2233T1G

$0.16
  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-

SKU:79c4ba250715 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC59
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:230 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59

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NSVMUN2233T1G

Overview

The NSVMUN2233T1G is a single NPN Bias Resistor Transistor (BRT) from the MUN2233 series, manufactured by onsemi. It integrates a transistor with a monolithic bias network consisting of a 4.7 kΩ series base resistor and a 47 kΩ base-emitter resistor, yielding a typical resistor ratio of 0.12. The device operates with a maximum collector-emitter voltage of 50 Vdc and supports continuous collector currents up to 100 mAdc. Packaged in an SC-59 (SOT-23) format, it functions within a junction temperature range of -55°C to +150°C. This component is AEC-Q101 qualified and PPAP capable.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components
  • AEC-Q101 qualified and PPAP capable for automotive applications requiring unique site control
  • Designed to reduce system cost and board space by eliminating external bias resistors

Applications

  • Automotive circuits requiring AEC-Q101 qualification
  • General-purpose digital switching applications
  • Logic level translation interfaces

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the NSV prefix aligns with project requirements for automotive-grade parts involving unique site and control change protocols. Ensure compliance with RoHS standards and Pb-free packaging specifications during procurement validation.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for logic interfacing or switching tasks. The fixed internal resistor values simplify circuit design by removing the need for external bias networks. Verify that the 50 V collector-emitter rating and 100 mA current capacity meet the specific load requirements of the target application.

Part Context

This part belongs to the MUN2233 family of digital transistors, which are designed to replace individual devices and their external resistor bias networks. The BRT architecture consolidates a single transistor with two resistors into one package. Other members of this family include MUN2233T1G and MMUN2233LT1G, offering variations in package styles such as SOT-23 and SC-70.

Replacement Considerations

  • MUN2233T1G

FAQ

What is the function of the 'NSV' prefix in the part number?

The NSV prefix indicates that the device is intended for automotive and other applications requiring unique site and control change requirements. These parts are AEC-Q101 qualified and PPAP capable.

How does the internal resistor network affect the input characteristics?

The device includes a 4.7 kΩ series base resistor and a 47 kΩ base-emitter resistor. This configuration simplifies circuit design by providing built-in biasing, reducing the total component count and board space required compared to discrete setups.

NSVMUN2233T1GNSVMUN2233T1G
$0.16
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