NSVMUN5116T1G-M02

NSVMUN5116T1G-M02

$0.03
  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-

SKU:6ab30abe4a81 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SC70-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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NSVMUN5116T1G-M02

Overview

The NSVMUN5116T1G is a single PNP digital transistor from onsemi, designed for surface-mount applications in the SC-70-3 package. It integrates a built-in bias resistor with a typical value of 4.7 kOhms to simplify circuit design. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C. The minimum DC current gain (hFE) is specified as 160.

Feature Summary

  • Integrates a single PNP transistor with a fixed internal bias resistor to reduce external component count.
  • Optimized for high-speed switching applications within compact surface-mount footprints.
  • Designed for robust operation across extended industrial temperature ranges.

Applications

  • General-purpose signal switching and level shifting
  • Driver circuits for logic interfaces
  • Battery management system control

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact ordering specifications. Ensure compatibility with required RoHS standards and packaging formats such as cut tape or reel before procurement. Cross-reference datasheet revisions to guarantee parameter consistency for the intended application environment.

Selection Notes

Select this component when a compact PNP solution with integrated base resistance is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Confirm that the SC-70-3 package dimensions fit the available PCB space constraints.

Part Context

This part belongs to the MUN5116 series of digital transistors manufactured by onsemi. These devices are engineered to replace discrete resistor-transistor combinations, offering space savings and improved performance in low-power switching applications.

Replacement Considerations

Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameters before replacing components in existing designs.

NSVMUN5116T1G-M02NSVMUN5116T1G-M02
$0.03
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