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The NSVMUN5116T1G is a single PNP digital transistor from onsemi, designed for surface-mount applications in the SC-70-3 package. It integrates a built-in bias resistor with a typical value of 4.7 kOhms to simplify circuit design. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C. The minimum DC current gain (hFE) is specified as 160.
Verify the specific suffix against official manufacturer documentation to confirm exact ordering specifications. Ensure compatibility with required RoHS standards and packaging formats such as cut tape or reel before procurement. Cross-reference datasheet revisions to guarantee parameter consistency for the intended application environment.
Select this component when a compact PNP solution with integrated base resistance is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Confirm that the SC-70-3 package dimensions fit the available PCB space constraints.
This part belongs to the MUN5116 series of digital transistors manufactured by onsemi. These devices are engineered to replace discrete resistor-transistor combinations, offering space savings and improved performance in low-power switching applications.
Consult official substitution guides for equivalent parts. Verify pinout compatibility and electrical parameters before replacing components in existing designs.