SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVMUN5116T1G is a single PNP digital transistor from the MUN5116 series, manufactured by onsemi. It integrates a bias resistor network within an SC-70-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hFE) of 160. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in the product datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a PNP digital transistor with a 4.7 kOhm input resistor is required. Confirm that the 50 V voltage rating and 100 mA current capacity meet the circuit requirements. Consider the SC-70-3 package dimensions for PCB layout constraints and verify thermal management needs given the 338 mW power dissipation limit.
This component belongs to the MUN5116 series of pre-biased transistors offered by onsemi. These devices are designed to replace discrete resistor-transistor combinations, offering a standardized solution for switching and amplification tasks. The series provides various configurations and resistance values to accommodate different logic interface requirements.
Direct substitutes may include other PNP digital transistors with similar voltage and current ratings, such as the MUN2116T1G, provided the package and internal resistor values are compatible. Verify pinout compatibility and electrical characteristics before substitution.