NSVMUN5116T1G

NSVMUN5116T1G

  • Description:PNP BIPOLAR DIGITAL TRANSISTOR (
  • Series:-

SKU:38e8ba50dd19 Category: Brand:

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Product Detailed Parameters

  • Description:PNP BIPOLAR DIGITAL TRANSISTOR (
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70-3 (SOT323)

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NSVMUN5116T1G

Overview

The NSVMUN5116T1G is a single PNP digital transistor from the MUN5116 series, manufactured by onsemi. It integrates a bias resistor network within an SC-70-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 4.7 kOhms and a minimum DC current gain (hFE) of 160. Power dissipation is rated at 338 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates a built-in bias resistor network to simplify circuit design and reduce component count.
  • Utilizes a compact SC-70-3 surface-mount package for efficient space utilization in dense layouts.
  • Designed for high reliability with an extended operating temperature range suitable for demanding environments.

Applications

  • General-purpose switching applications requiring integrated biasing.
  • Interface circuits between logic families and load drivers.
  • Low-power signal processing stages in consumer electronics.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in the product datasheet. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a PNP digital transistor with a 4.7 kOhm input resistor is required. Confirm that the 50 V voltage rating and 100 mA current capacity meet the circuit requirements. Consider the SC-70-3 package dimensions for PCB layout constraints and verify thermal management needs given the 338 mW power dissipation limit.

Part Context

This component belongs to the MUN5116 series of pre-biased transistors offered by onsemi. These devices are designed to replace discrete resistor-transistor combinations, offering a standardized solution for switching and amplification tasks. The series provides various configurations and resistance values to accommodate different logic interface requirements.

Replacement Considerations

Direct substitutes may include other PNP digital transistors with similar voltage and current ratings, such as the MUN2116T1G, provided the package and internal resistor values are compatible. Verify pinout compatibility and electrical characteristics before substitution.

NSVMUN5116T1GNSVMUN5116T1G

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