NSVMUN5132T1G

Overview

The NSVMUN5132T1G is a PNP Bias Resistor Transistor (BRT) from onsemi, featuring an integrated monolithic bias network with R1 = 4.7 kΩ and R2 = 4.7 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device is housed in the SC-70/SOT-323 package (Case 419). Electrical characteristics include a minimum DC current gain (hFE) of 15 at IC = 5.0 mA and VCE = 10 V. Thermal performance specifies a total device dissipation of 202 mW at TA = 25°C with a junction-to-ambient thermal resistance of 618 °C/W under minimum pad conditions.

Feature Summary

• Integrates a single PNP transistor with a dual-resistor bias network to replace discrete components.
• Simplifies circuit design by reducing board space and component count.
• NSV prefix indicates AEC-Q101 qualification and PPAP capability for automotive applications.

Applications

• Automotive systems requiring unique site and control change requirements.
• General-purpose digital switching circuits.
• Logic level translation interfaces.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Ensure that the NSV prefix requirement aligns with project specifications for AEC-Q101 qualification and PPAP compliance. Cross-reference the datasheet revision history to confirm the most current electrical parameters and mechanical dimensions are applied during procurement.

Selection Notes

Select this component when a compact PNP solution with fixed bias resistors is required. The SC-70/SOT-323 package offers a small footprint suitable for space-constrained designs. Verify that the 4.7 kΩ internal resistor values match the target input impedance and drive requirements. Confirm that the 50 V collector-emitter rating exceeds the maximum operating voltage of the application circuit.

Part Context

This part belongs to the MUN2132/DTA143E family of digital transistors published under document DTA143E/D. It shares electrical characteristics with other variants in the series but differs in packaging and prefix designation. The NSV prefix specifically denotes automotive-grade qualification, distinguishing it from standard commercial versions like the MUN5132T1G.

Replacement Considerations

MUN5132T1G

FAQ

What is the function of the internal resistors in the NSVMUN5132T1G?

The device contains a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2), both typically 4.7 kΩ, which eliminate the need for external discrete resistors.

Is the NSVMUN5132T1G qualified for automotive applications?

Yes, the NSV prefix indicates that the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.