NSVMUN5136T1G

NSVMUN5136T1G

$0.01
  • Description:BIAS RESISTOR TRANSISTOR
  • Series:-

SKU:9a3b8623bf9e Category: Brand:

  
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Product Detailed Parameters

  • Description:BIAS RESISTOR TRANSISTOR
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):100 kOhms
  • Resistor - Emitter Base (R2):100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:202 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70 (SOT323)

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NSVMUN5136T1G

Overview

The NSVMUN5136T1G is a single NPN bias resistor transistor (BRT) from onsemi, housed in an SC-70-3 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes integrated base and emitter resistors with a typical ratio of 1:2. Key electrical specifications include a minimum DC current gain (hFE) of 80 and a power dissipation rating of 202 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates NPN transistor with built-in biasing resistors for simplified circuit design
  • Optimized for high-speed switching applications with low input capacitance
  • Robust thermal performance supporting operation up to 150°C junction temperature

Applications

  • General-purpose signal switching in consumer electronics
  • Driver circuits for small-signal loads
  • Logic level translation interfaces
  • Battery management system control lines

Procurement Notes

Verify the specific suffix 'NSV' against the official onsemi datasheet to confirm AEC-Q100 automotive qualification status, as standard MUN5136 variants may lack this certification. Ensure the SC-70-3 package dimensions match the target PCB footprint requirements. Cross-reference the manufacturer part number directly with the latest product change notification to avoid discrepancies between distributor listings and official component specifications.

Selection Notes

Select this component when a compact NPN BRT solution is required for space-constrained designs. The 50V rating suits low-voltage logic systems. Consider the 100mA current limit for load driving capabilities. The SC-70-3 package offers a smaller footprint compared to SOT-23 alternatives. Verify that the integrated resistor values align with the specific drive voltage and current requirements of the application interface.

Part Context

This part belongs to the MUN5136 series of pre-biased transistors designed by onsemi. It serves as a compact alternative to discrete resistor-transistor combinations, reducing board space and assembly complexity. The NSV prefix typically denotes automotive-grade reliability standards within the broader digital transistor portfolio, targeting robust performance in demanding environments.

Replacement Considerations

Direct substitutes include the MUN5136T1G or NSVMUN5136LT1G, provided the package and electrical parameters are identical. Verify pinout compatibility and thermal characteristics before substitution. Alternative packages like SOT-23-3 offer similar functionality but require layout adjustments.

NSVMUN5136T1GNSVMUN5136T1G
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