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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SC70-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：202 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
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Overview
The NSVMUN5216T1G is an NPN digital transistor from onsemi, featuring a built-in dual resistor network in a compact SOT-323 (SC-70) surface-mount package. It integrates a 4.7 kOhm base resistor and a 47 kOhb emitter resistor, providing a typical resistance ratio of approximately 0.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 VDC and a continuous collector current of 100 mA. With a power dissipation rating of 250 mW and a maximum operating frequency of 150 MHz, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrated dual-resistor network simplifies circuit design by reducing component count and board space.
- High switching speed capability suitable for high-frequency digital applications.
- Wide operating temperature range ensures reliability in demanding thermal environments.
Applications
- Level shifting and logic interface circuits
- Switching applications in portable devices
- Driver circuits for low-power loads
Procurement Notes
Verify the exact ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Ensure the supplier provides traceable documentation confirming the component originates from authorized channels. Check for any specific handling requirements related to electrostatic discharge during storage and assembly processes.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing resistors is required. The 4.7 kOhm input resistor value should match the driving source impedance requirements. Verify that the 50 V voltage rating and 100 mA current capacity exceed the application's peak operational demands to ensure long-term reliability.
Part Context
This part belongs to onsemi's NPN digital transistor family, designed for replacing discrete resistor-transistor combinations. It is commonly used in consumer electronics and industrial control systems where space constraints and assembly efficiency are critical. The SC-70 package offers a small footprint compared to traditional through-hole alternatives.
Replacement Considerations
Direct substitutes include other NPN digital transistors with similar 4.7k/47k resistor ratios and SOT-323 packaging, such as those from ROHM or Nexperia. Verify pinout compatibility and electrical parameters like VCEO and hFE before substitution.
FAQ
What is the internal resistor configuration of the NSVMUN5216T1G?
It features a 4.7 kOhm base resistor and a 47 kOhm emitter resistor connected to an NPN transistor.
What is the maximum operating frequency?
The maximum operating frequency is specified as 150 MHz.
Is this component suitable for high-temperature environments?
Yes, it has a maximum operating temperature of +150°C, making it suitable for high-thermal applications.
