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Product Detailed Parameters
- Description：SS SC70 BR XSTR NPN 50V
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：202 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
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Overview
The NSVMUN5234T1G is an NPN Digital Transistor (BRT) featuring a monolithic bias network with R1 = 22 kΩ and R2 = 47 kΩ. It integrates a single transistor with series base and base-emitter resistors to replace discrete components. Key electrical ratings include a Collector-Base Voltage (VCBO) of 50 Vdc, Collector-Emitter Voltage (VCEO) of 50 Vdc, and Continuous Collector Current (IC) of 100 mAdc. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network consisting of two resistors to eliminate external components.
- Simplifies circuit design by reducing board space and component count.
- Features the NSV prefix for automotive applications requiring unique site and control change requirements.
Applications
- Automotive systems requiring AEC-Q101 qualification and PPAP capability.
- General-purpose switching circuits utilizing Bias Resistor Transistors.
- Applications necessitating reduced board space through integrated bias networks.
Procurement Notes
Verify the specific ordering suffix 'T1G' corresponds to the SC-70/SOT-323 package configuration as documented in the official datasheet. Confirm that the NSV prefix aligns with your project's requirement for automotive-grade parts involving unique site and control change protocols. Ensure compliance with Pb-Free and RoHS standards specified for this part number.
Selection Notes
Select this component when a compact NPN solution with fixed biasing is required. The internal resistor values (R1=22k, R2=47k) are optimized for specific drive conditions. Consider the thermal characteristics and power dissipation limits relative to the operating ambient temperature. Verify that the 50V voltage rating meets the system's maximum collector-emitter requirements.
Part Context
This device belongs to the DTC124X family of digital transistors, which includes variants like MUN2234 and MMUN2234L. These devices share the same functional architecture but differ in packaging and specific marking codes. The NSVMUN5234T1G specifically utilizes the SC-70/SOT-323 form factor suitable for surface-mount applications.
Replacement Considerations
Direct substitutes within the same family include MUN5234T1G and NSVMUN5234T1G. Cross-reference other DTC124X variants such as DTC124XE or DTC124XM3 only if package compatibility and pinout alignment are verified against the target footprint.
