RF Diode NSVR201MXT5G product image

NSVR201MXT5G

$0.46
  • Description:RF DIODE SCHOTTKY 2V 2X2DFN
  • Series:-

SKU:f10a5a133fb2 Category: Brand:

  
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NSVR201MXT5G is listed in the RF Diode range at ChipApex. The manufacturer field lists onsemi. Its product description is RF DIODE SCHOTTKY 2V 2X2DFN. Review the specifications below when checking this part for your BOM.

RF Diode specifications for NSVR201MXT5G

  • Description:RF DIODE SCHOTTKY 2V 2X2DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):2V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.2pF @ 0V, 1MHz
  • Resistance @ If, F:18Ohm @ 10mA, 1MHz
  • Power Dissipation (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Package / Case:2-XDFN
  • Supplier Device Package:2-X2DFN (1x0.6)
  • Grade:Automotive
  • Qualification:AEC-Q101

RF Diode datasheet and documents for NSVR201MXT5G

NSVR201MXT5G

RF Diode Overview

The NSVR201MXT5G is a Schottky barrier diode manufactured by onsemi, designed for mixer and detector applications in radio frequency circuits. It features a single configuration housed in a compact 2-XDFN (1x0.6) package. The device operates with a maximum repetitive reverse voltage of 2V and supports a forward current of 50 mA. Its low capacitance and fast switching characteristics make it suitable for high-frequency signal processing tasks where minimal signal distortion and efficient rectification are required.

RF Diode Feature Summary

  • Optimized for RF mixer and detector functions
  • Ultra-compact surface-mount footprint
  • Low forward voltage drop for efficiency

RF Diode Applications

  • RF signal detection circuits
  • Mixer stages in communication modules
  • High-frequency rectification applications

RF Diode Procurement Notes

Verify the exact part number against official onsemi documentation, as standard listings often reference the NSR201MXT5G variant. Confirm package dimensions and tape-and-reel specifications match design requirements. Ensure compliance with RoHS directives and check for any specific handling instructions related to the small form factor during assembly.

RF Diode Selection Notes

Select this component when designing low-voltage RF front-ends requiring minimal parasitic capacitance. The 2V rating suits low-power signal paths. Compare thermal dissipation capabilities against system constraints. Ensure the 50 mA current limit aligns with peak signal expectations to prevent device degradation under overload conditions.

RF Diode Part Context

This device belongs to onsemi's NSR series of Schottky diodes, which are engineered for high-frequency performance. The series typically includes variants with different voltage ratings and current capacities. The NSVR201MXT5G specifically targets niche RF applications where size and speed are critical parameters for signal integrity.

RF Diode Replacement Considerations

Direct substitutes include other ON Semiconductor NSR201 variants or comparable Schottky diodes from manufacturers like Renesas or Hitachi that offer similar 2V ratings and XDFN packaging. Verify pin compatibility and electrical parameters before substitution.

NSVR201MXT5GNSVR201MXT5G
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