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Product Detailed Parameters
- Description：TRANS 2NPN 40V 200MA SOT-963
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：350mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The NSVT3904DP6T5G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It features an SOT-963-6 surface-mount package and utilizes silicon technology. The device supports a maximum continuous collector current of 200 mA with a collector-emitter voltage rating of 40 V. Key electrical specifications include a collector-base voltage of 60 V, an emitter-base voltage of 6 V, and a saturation voltage of 300 mV. Thermal performance allows for power dissipation up to 420 mW, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Dual NPN configuration within a compact SMD/SMT package
- High thermal stability supporting extended operating temperatures
- Low saturation voltage for efficient switching applications
Applications
- General purpose switching circuits
- Signal amplification stages
- Digital logic interface buffers
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices that may affect mechanical dimensions or material composition prior to final procurement decisions.
Selection Notes
Select this component when a dual NPN topology is required in a small footprint. Compare the 40 V collector-emitter voltage and 200 mA current limits against circuit requirements. Evaluate the SOT-963-6 package constraints against available PCB real estate and thermal management capabilities relative to the 420 mW power dissipation rating.
Part Context
This part belongs to the NST3904DP6 series of general-purpose dual transistors. It shares functional similarities with other low-power BJT arrays but is distinct due to its specific pinout and packaging in the SOT-963-6 outline. It serves as a compact alternative to discrete single-transistor implementations in space-constrained designs.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Potential equivalents may include other dual NPN BJTs in similar packages, provided they match the 40 V VCEO, 200 mA IC, and SOT-963-6 form factor without altering board layout.
