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The NSVT3904DXV6T1G is a dual NPN bipolar junction transistor manufactured by onsemi. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device operates within a temperature range from -55°C to +150°C and has a power dissipation capacity of 500 mW. Key electrical specifications include a collector-base voltage of 40 V, an emitter-base voltage of 5 V, and a minimum DC current gain (hFE) of 30. The component is housed in a compact surface-mount package suitable for automated assembly.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required automotive reliability standards if deployed in vehicle systems. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.
Select this component when a dual NPN configuration is required in a small form factor. Ensure the design accommodates the 500 mW power dissipation limit under expected operating conditions. Verify that the 40 V voltage ratings align with circuit requirements and that the 200 mA current capability suffices for load demands.
This part belongs to onsemi's general-purpose small-signal transistor portfolio. It serves as a dual-transistor alternative to single NPN devices, reducing board space. The series supports high-volume manufacturing through standardized surface-mount packaging and consistent electrical performance across automotive and industrial segments.
Verify pinout compatibility and electrical parameters against potential substitutes. Ensure replacement parts maintain AEC-Q101 compliance if used in automotive contexts. Check for equivalent hFE ranges and saturation voltages to guarantee circuit functionality without modification.