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Product Detailed Parameters
- Description：TRANS 2PNP 40V 200MA SOT-563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：500mW
- Frequency - Transition：250MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NSVT3906DXV6T1G is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 500 mW. Key electrical parameters include a collector-base voltage of 40 V, an emitter-base voltage of 5 V, and a saturation voltage of 400 mV. The transition frequency is specified at 250 MHz. This component is AEC-Q101 qualified for automotive applications and is supplied in surface-mount packaging.
Feature Summary
- Dual PNP configuration integrating two transistors in a single package
- Automotive grade qualification compliant with AEC-Q101 standards
- High thermal stability supporting operation up to 150°C junction temperature
Applications
- Automotive electronic circuits requiring AEC-Q101 qualified components
- General purpose switching applications in consumer electronics
- Signal processing stages in portable devices
Procurement Notes
Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure authenticity. Confirm that the received components match the AEC-Q101 automotive qualification requirements for your specific application environment. Check for any recent product change notices regarding material composition or manufacturing site updates before integration into production lines.
Selection Notes
Select this component when a dual PNP configuration is required in a compact surface-mount footprint. Ensure the design accounts for the 500 mW power dissipation limit and the 40 V voltage ratings under worst-case operating conditions. Consider the 250 MHz transition frequency if high-speed switching performance is necessary for the target circuit application.
Part Context
This part belongs to the NST3906DXV6 series of dual PNP transistors from onsemi. It serves as a space-saving alternative to discrete single transistors in designs requiring paired PNP elements. The dual configuration simplifies PCB layout and reduces assembly complexity compared to using separate components.
Replacement Considerations
Verify pinout compatibility and electrical parameter equivalence before substituting with other dual PNP BJT packages. Cross-reference datasheets to confirm matching voltage, current, and thermal specifications.
