NSVT3946DXV6T1G

Overview

The NSVT3946DXV6T1G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, integrating one NPN and one PNP transistor within a single SOT-563 surface-mount package. The device operates with a maximum collector current of 200 mA and features a collector-emitter breakdown voltage (VCEO) of 40 V for both polarities. It supports a wide operating temperature range from -55°C to +150°C and dissipates up to 500 mW of power. The component utilizes silicon technology and includes integrated base resistors to simplify circuit design.

Feature Summary

• Integrates complementary NPN and PNP transistors in a compact SOT-563 package
• Includes monolithic bias resistor network to reduce external component count
• Designed for high-speed switching applications with low saturation voltage

Applications

• DC-DC converter control circuits
• Logic level translation interfaces
• General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status and lead-free specifications directly with the supplier or authorized distributor before procurement.

Selection Notes

Select this component when space-constrained designs require matched NPN/PNP pairs with integrated biasing. Ensure the required collector current does not exceed 200 mA and that the thermal management strategy accommodates the 500 mW power dissipation limit in the target SOT-563 footprint.

Part Context

This part belongs to the NST/NSVT series of dual digital transistors from onsemi. These devices are engineered to replace discrete transistor-resistor networks, offering improved board space efficiency and consistent electrical characteristics compared to individual components.

Replacement Considerations

Consult the official datasheet for confirmed substitute part numbers. Verify pin-to-pin compatibility and electrical parameter equivalence before substituting.