NSVUMZ1NT1G

NSVUMZ1NT1G

$0.22
  • Description:TRANS NPN/PNP 50V 200MA SOT-363
  • Series:-

SKU:121a33cbfd2d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 200MA SOT-363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:250mW
  • Frequency - Transition:114MHz, 142MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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NSVUMZ1NT1G

Overview

The NSVUMZ1NT1G is a complementary dual general-purpose amplifier transistor from onsemi, featuring an NPN and PNP pair in a SC-88 (SOT-363) surface-mount package. It offers a collector-emitter voltage of 50 V and continuous collector current of 200 mA. The device provides a DC current gain (hFE) ranging from 200 to 400 at 2.0 mA. Thermal dissipation reaches 187 mW with one junction heated and 250 mW with both junctions heated at 25 °C. The component is AEC-Q101 qualified, RoHS compliant, and packaged in tape and reel quantities of 3000.

Feature Summary

  • Complementary dual configuration integrating NPN and PNP transistors for space-efficient circuit design
  • AEC-Q101 qualification supporting automotive and high-reliability applications requiring unique site control
  • High current gain performance suitable for general-purpose amplification tasks

Applications

  • Automotive electronics systems requiring AEC-Q101 compliance
  • General-purpose signal amplification circuits
  • Switching applications within low-voltage digital logic interfaces

Procurement Notes

Verify the NSV prefix indicates specific automotive site requirements and PPAP capability. Confirm the SC-88 package style matches the target PCB footprint. Ensure thermal management aligns with the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a matched complementary pair is required in a minimal footprint. The 50 V rating suits low-voltage logic levels. Verify that the 200 mA current limit meets load requirements. Consider the SC-88 thermal characteristics for power dissipation constraints in dense layouts.

Part Context

This part belongs to the UMZ1N series of complementary dual transistors manufactured by onsemi. It serves as a compact solution for replacing discrete transistor pairs in amplifier and switching stages. The NSV variant specifically targets automotive supply chains with enhanced quality controls.

Replacement Considerations

Direct pin-compatible substitutes include the standard UMZ1NT1G. Verify electrical parameters such as hFE ranges and breakdown voltages match the original design specifications before substitution.

NSVUMZ1NT1GNSVUMZ1NT1G
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