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The NSVUMZ1NT1G is a complementary dual general-purpose amplifier transistor from onsemi, featuring an NPN and PNP pair in a SC-88 (SOT-363) surface-mount package. It offers a collector-emitter voltage of 50 V and continuous collector current of 200 mA. The device provides a DC current gain (hFE) ranging from 200 to 400 at 2.0 mA. Thermal dissipation reaches 187 mW with one junction heated and 250 mW with both junctions heated at 25 °C. The component is AEC-Q101 qualified, RoHS compliant, and packaged in tape and reel quantities of 3000.
Verify the NSV prefix indicates specific automotive site requirements and PPAP capability. Confirm the SC-88 package style matches the target PCB footprint. Ensure thermal management aligns with the specified junction-to-ambient resistance values under actual operating conditions.
Select this component when a matched complementary pair is required in a minimal footprint. The 50 V rating suits low-voltage logic levels. Verify that the 200 mA current limit meets load requirements. Consider the SC-88 thermal characteristics for power dissipation constraints in dense layouts.
This part belongs to the UMZ1N series of complementary dual transistors manufactured by onsemi. It serves as a compact solution for replacing discrete transistor pairs in amplifier and switching stages. The NSV variant specifically targets automotive supply chains with enhanced quality controls.
Direct pin-compatible substitutes include the standard UMZ1NT1G. Verify electrical parameters such as hFE ranges and breakdown voltages match the original design specifications before substitution.