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NTD20P06LT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 15.5A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD20P06LT4G
- Description：MOSFET P-CH 60V 15.5A DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：150mOhm @ 7.5A, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for NTD20P06LT4G
Single FETs, MOSFETs Overview
The NTD20P06LT4G is a P-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 20 A at 25°C. The device utilizes a DPAK (TO-252) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance (Rds(on)) of 82 mΩ, a typical gate charge of 33 nC at 10 V, and a maximum gate-source voltage of ±20 V. It operates within a temperature range of -55°C to +175°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Single P-channel enhancement mode configuration for high-side switching applications
- Low on-resistance design to minimize conduction losses in power circuits
- Surface-mount DPAK (TO-252) package optimized for thermal performance and PCB space efficiency
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Motor control driver circuits
- Power management unit load switches
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the T4G suffix to ensure correct packaging and lead-free compliance. Confirm that the required current rating aligns with the thermal constraints of the specific application environment. Check for any recent obsolescence notices or lifecycle changes from the manufacturer before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V P-channel MOSFET is required for low-current DC-DC conversion or motor control. Ensure the gate drive voltage supports the specified threshold characteristics. Compare thermal resistance values against the available copper area on the printed circuit board to guarantee safe operating temperatures under maximum load conditions.
Single FETs, MOSFETs Part Context
This device belongs to the NTD series of power MOSFETs from onsemi, designed for general-purpose power switching. The series offers a balance of voltage rating and current handling capability in standard surface-mount packages. It serves as a discrete solution for replacing older bipolar transistor designs in modern efficient power supply architectures.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 60 V P-channel MOSFETs in DPAK packages with comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with onsemi's official replacement guides for validated alternatives.
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