NTD6416ANT4G

$1.05

Description：MOSFET N-CH 100V 17A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:77cad645d98c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTD6416ANT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 17A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD6416ANT4G

Description：MOSFET N-CH 100V 17A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：81mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：620 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：71W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NTD6416ANT4G

NTD6416ANT4G

Single FETs, MOSFETs Overview

The NTD6416ANT4G is an N-channel enhancement mode MOSFET manufactured by onsemi, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of 100 V and a continuous drain current of 17 A at case temperature. The device exhibits a maximum on-resistance of 81 mΩ at 10 V gate drive and 17 A drain current. Key electrical characteristics include a maximum gate charge of 20 nC at 10 V and a maximum input capacitance of 620 pF at 25 V. The component operates within a junction temperature range of -55°C to 175°C with a maximum power dissipation of 71 W.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode construction for efficient switching applications
Low on-resistance characteristic optimized for high-current performance
Robust thermal management capability via DPAK lead frame design

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging type and compliance status. Ensure the component meets RoHS3 requirements for the intended market. Confirm that the DPAK footprint matches the target PCB layout dimensions. Validate that the thermal resistance parameters align with the system's heat dissipation strategy. Cross-reference the datasheet revision date to ensure access to the latest electrical specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V N-channel MOSFET with moderate current handling is required in a compact surface-mount form factor. The DPAK package offers a balance between thermal performance and board space efficiency. Consider the gate charge and threshold voltage specifications to ensure compatibility with available driver circuitry. Evaluate the on-resistance value relative to the expected load current to manage conduction losses effectively.

Single FETs, MOSFETs Part Context

This part belongs to the NTD6416AN family of N-channel MOSFETs from onsemi. The T4G suffix typically denotes tape and reel packaging and RoHS compliance. The base device is designed for general-purpose power switching applications requiring reliable performance in industrial and consumer electronics environments.