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NTD85N02RG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 24V 12A/85A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTD85N02RG
- Description：MOSFET N-CH 24V 12A/85A DPAK
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：24 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.7 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2050 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta), 78.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for NTD85N02RG
Single FETs, MOSFETs Overview
The NTD85N02RG is a lead-free N-Channel Power MOSFET in a DPAK package. It features a Drain-to-Source Voltage (VDSS) of 24 V and a Continuous Drain Current (ID) of 85 A at TC = 25°C. The device utilizes Planar HD3e Process technology for fast switching performance, low RDS(on), low capacitance, and low gate charge.
Single FETs, MOSFETs Feature Summary
- Planar HD3e Process for Fast Switching Performance
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Low Gate Charge to Minimize Switching Losses
Single FETs, MOSFETs Applications
- CPU Power Delivery
- DC−DC Converters
- Low Side Switching
Single FETs, MOSFETs Procurement Notes
Verify the exact ordering suffix against official documentation to confirm package type and compliance status. Confirm thermal resistance values match your specific PCB pad layout requirements. Ensure component authenticity through authorized distribution channels.
Single FETs, MOSFETs Selection Notes
Select based on required VDSS and ID ratings relative to operating conditions. Evaluate thermal management needs using junction-to-case resistance. Consider switching speed requirements driven by gate charge and capacitance parameters.
Single FETs, MOSFETs Part Context
This component belongs to the NTD series of N-Channel Power MOSFETs manufactured by onsemi. It is designed for general-purpose power switching applications requiring high current handling capabilities within a compact surface-mount footprint.
Single FETs, MOSFETs Replacement Considerations
NTD85N02R
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is 85 A when the case temperature is maintained at 25°C.
What is the typical drain-to-source on-resistance?
The typical RDS(on) is 5.2 mΩ when tested with a gate voltage of 10 V and a drain current of 20 A.
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