FET, MOSFET Arrays NTHD4401PT3 product image

NTHD4401PT3

$0.20
  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-

SKU:02249515bcf3 Category: Brand:

  
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NTHD4401PT3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.1A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD4401PT3

  • Description:MOSFET 2P-CH 20V 2.1A CHIPFET
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.1A
  • Rds On (Max) @ Id, Vgs:155mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:ChipFET™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTHD4401PT3

NTHD4401PT3

FET, MOSFET Arrays Overview

The NTHD4401PT3 is a dual P-channel power MOSFET array manufactured by onsemi, housed in the ChipFET™ surface-mount package. It features a drain-source voltage (Vdss) of -20 V and a continuous drain current (Id) of -3.0 A at 25°C. The device exhibits a maximum gate threshold voltage (Vgs(th)) of 1.2 V at 250 µA and a typical gate charge (Qg) of 6 nC at 4.5 V. Input capacitance (Ciss) is specified at 300 pF with 10 V applied. The on-resistance (Rds(on)) is 155 mΩ at 4.5 V and 2.1 A. Maximum power dissipation is 1.1 W, with an operating junction temperature range from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs within a single compact footprint for space-constrained designs.
  • Logic Level Gate Drive: Optimized threshold characteristics allow direct interfacing with standard logic outputs without requiring additional level shifting.
  • ChipFET Technology: Utilizes advanced packaging to minimize thermal resistance and physical size while maintaining robust electrical performance.

FET, MOSFET Arrays Applications

  • DC/DC Converter Synchronous Rectification
  • Low Voltage Load Switching
  • Battery Protection Circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'T3' against official manufacturer documentation, as standard listings often reference 'T1'. Confirm RoHS compliance status and lifecycle stage directly with onsemi, as availability may vary by region. Ensure the ordering part number matches the exact tape and reel specifications required for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching in low-voltage environments. Compare Rds(on) and Qg values against alternative packages if higher current capacity or lower switching losses are needed. Verify that the 20V rating provides sufficient headroom for the specific supply voltage and transient conditions of the target circuit.

FET, MOSFET Arrays Part Context

This device belongs to the NTHD44 series of dual MOSFET arrays from onsemi. It shares functional similarities with parts like the NTHD4401P but differs in packaging and taping specifications. The ChipFET form factor distinguishes it from traditional discrete TO-236 or SC-88 packages, offering improved thermal management for its size class.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers for the NTHD4401PT3 variant are not available in the provided source data. Cross-reference with other NTHD44 series devices such as NTHD4401PT1 only after verifying pinout compatibility and electrical parameter equivalence through official datasheets.

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