NTJD4001NT2G

FET, MOSFET Arrays Overview

The NTJD4001NT2G is a dual N-channel small signal MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 250 mA. The device utilizes an SC-88 surface-mount package with six pins, measuring 2.2 mm in length and 1 mm in height. Key electrical parameters include a maximum drain-source resistance (Rds(on)) of 2.5 Ω, a typical gate charge (Qg) of 0.9 nC at the specified gate-source voltage, and a maximum power dissipation (Pd) of 2.72 W. The component operates within a temperature range of -55°C to 150°C and meets AEC-Q101 automotive standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for compact circuit design
• Low gate charge enabling fast switching performance
• ESD protected gate structure for enhanced reliability
• Small footprint significantly smaller than TSOP-6 packages

FET, MOSFET Arrays Applications

• Low side load switching
• Li-ion battery supplied devices such as cell phones and PDAs
• Buck converters
• Level shifting circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'NT2G' against official onsemi documentation to confirm tape-and-reel quantity and packaging specifications. Ensure the ordering part number matches the required automotive qualification level and package variant. Cross-reference with authorized distributors to validate availability and authenticity before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in minimal space. The 30 V rating and 250 mA current capacity suit low-power signal switching. Consider the 2.5 Ω Rds(on) for efficiency requirements. Verify thermal management needs given the 2.72 W power dissipation limit in the SC-88 package.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's small signal MOSFET family designed for portable electronics. It serves as a compact alternative to larger packages like TSOP-6, offering a 30% reduction in footprint. The dual configuration allows for efficient implementation of bridge drivers or differential switches in mobile devices.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support or distributor cross-reference tools for verified equivalents.