NTLJD3119CTAG

FET, MOSFET Arrays Overview

The NTLJD3119CTAG is a dual N-channel Power MOSFET array manufactured by onsemi, housed in a surface-mount 6-lead WDFN package measuring 2x2 mm. It features a maximum drain-source voltage of 20V and supports continuous drain currents of 2.6A and 2.3A for its respective channels. The device exhibits low switching characteristics with fall times of 4.7 ns and 13.2 ns, alongside forward transconductance values of 4.2 S and 3.1 S. Designed for high-efficiency power management applications, it offers a compact footprint suitable for space-constrained designs requiring reliable dual-channel switching performance.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single compact package
• Low thermal resistance design for efficient heat dissipation
• Fast switching speeds to minimize power loss during transitions

FET, MOSFET Arrays Applications

• Portable electronic devices requiring compact power solutions
• Battery-powered equipment needing efficient voltage regulation
• General-purpose low-voltage switching circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TAG against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the 20V rating and current capabilities align with your circuit requirements before finalizing procurement. Cross-reference the datasheet revision date to ensure access to the most recent electrical characteristics and mechanical drawings.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-channel N-MOSFET solution is required in a minimal footprint. The 20V rating suits low-voltage logic interfaces and battery systems. Evaluate the thermal performance in your specific PCB layout, as the small WDFN package relies heavily on copper area for heat spreading. Ensure gate drive voltages remain within safe operating limits for the 20V threshold.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of discrete power semiconductors designed for consumer and industrial electronics. The NTLJD3119C series provides integrated dual-channel functionality, reducing board space compared to using two separate single MOSFETs. It complements other low-voltage switching components in power management IC ecosystems.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 20V rating, dual N-channel configuration, and 6-lead WDFN (2x2mm) package dimensions. Verify pinout compatibility and thermal resistance parameters to ensure equivalent performance in existing layouts.