NTLJD3183CZTAG

FET, MOSFET Arrays Overview

The NTLJD3183CZTAG is a dual N-channel enhancement mode field-effect transistor manufactured by onsemi. It is housed in a compact SOT-363 surface-mount package, designed for high-efficiency switching applications. Key electrical parameters include a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 1.5 A at 25°C. The device features a low on-resistance (R_DS(on)) of typically 0.14 Ω at V_GS = 4.5 V, ensuring minimal conduction losses. Gate threshold voltage (V_GS(th)) ranges from 0.4 V to 1.0 V, facilitating compatibility with low-voltage logic drivers.

FET, MOSFET Arrays Feature Summary

• Dual configuration in a single compact package for space-constrained designs
• Low on-resistance for improved power efficiency
• Compatible with standard logic level inputs

FET, MOSFET Arrays Applications

• Load switching in portable consumer electronics
• Power management circuits in mobile devices
• Battery protection and control systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix CZTAG to confirm the tape-and-reel packaging quantity and variant details. Ensure the component matches the required RoHS compliance status and lead-free specifications as defined in the official datasheet. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and supply chain integrity before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel FET solution is required in an SOT-363 footprint. Consider the 20 V voltage rating and 1.5 A current capacity against the application's peak load requirements. Evaluate the gate charge and input capacitance values if high-speed switching performance is critical for the target circuit design.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFETs optimized for portable applications. The SOT-363 package allows for automated assembly and reduced board area compared to discrete single transistors. It serves as a common alternative in designs requiring dual-switching functionality within tight spatial constraints.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives such as the NTLJD3183CZT1G or other dual N-channel FETs in SOT-363 packages from onsemi or other manufacturers. Verify that substitute parts meet or exceed the original V_DSS, I_D, and R_DS(on) specifications.