FET, MOSFET Arrays NTLJD4150PTBG product image

NTLJD4150PTBG

  • Description:MOSFET 2P-CH 30V 1.8A 6WDFN
  • Series:-

SKU:9d5153ca2979 Category: Brand:

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NTLJD4150PTBG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 1.8A 6WDFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLJD4150PTBG

  • Description:MOSFET 2P-CH 30V 1.8A 6WDFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.8A
  • Rds On (Max) @ Id, Vgs:135mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:300pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-WDFN (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLJD4150PTBG

NTLJD4150PTBG

FET, MOSFET Arrays Overview

The NTLJD4150PTBG is a dual P-channel enhancement-mode MOSFET from onsemi, housed in a compact 6-lead WDFN package with dimensions of 2.2mm x 2.2mm and a height of 1mm. It features an exposed drain pad for efficient thermal dissipation. Key electrical specifications include a maximum drain-source voltage (Vds) of -30V and a continuous drain current (Id) of -3.4A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1Ω and a typical gate charge (Qg) of 2.2nC. It operates within a temperature range of -55°C to 150°C junction temperature, with a maximum power dissipation of 700mW.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration in a single compact surface-mount package
  • Exposed drain pad design facilitates effective heat transfer and thermal management
  • Logic-level gate threshold enables direct drive from standard logic interfaces

FET, MOSFET Arrays Applications

  • Low-voltage DC-DC buck converter circuits
  • Power management units for portable electronic devices
  • Battery protection and load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q101 automotive qualification requirements if intended for automotive-grade deployments. Cross-reference the exact part number with the latest product release notes to validate availability and any potential design changes.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual P-channel switching capabilities. The low on-resistance supports efficient power handling in small form factors. Ensure the application voltage does not exceed the 30V rating and consider the thermal resistance of the PCB layout due to the exposed pad requirement for optimal performance.

FET, MOSFET Arrays Part Context

This device belongs to onsemi’s uCool family of power MOSFETs, designed for high-efficiency power conversion. The dual configuration reduces board space compared to discrete solutions. It serves as a modern alternative to older SC-88 footprint components, offering improved thermal characteristics while maintaining compatibility with existing mechanical layouts.

FET, MOSFET Arrays Replacement Considerations

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