FET, MOSFET Arrays NTLTD7900ZR2 product image

NTLTD7900ZR2

$0.18
  • Description:MOSFET 2N-CH 20V 6A MICRO8
  • Series:-

SKU:1046877435cc Category: Brand:

  
  • Quantity
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NTLTD7900ZR2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 6A MICRO8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLTD7900ZR2

  • Description:MOSFET 2N-CH 20V 6A MICRO8
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:-
  • Configuration:-
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLTD7900ZR2

NTLTD7900ZR2

FET, MOSFET Arrays Overview

The NTLTD7900ZR2 is a logic-level, single N-channel power MOSFET manufactured by onsemi. It features a Micro8 leadless package and supports a drain-source voltage (V_DSS) of 20 V with a continuous drain current (I_D) of 9 A. The device exhibits a maximum on-resistance (R_DS(on)) of 15 mΩ at a gate-source voltage of 4.5 V. It operates within a temperature range of -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Logic-level gate drive capability for direct interface with standard digital logic controllers
  • Leadless Micro8 package design optimized for high-density surface-mount applications
  • Low on-resistance characteristics to minimize conduction losses in power switching circuits

FET, MOSFET Arrays Applications

  • DC-DC converter output stages
  • Load switch implementations
  • Power management modules requiring compact footprints

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels and cross-reference datasheet revision levels prior to integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when a 20 V rating and 9 A current capacity are required in a minimal footprint. Evaluate thermal performance constraints associated with the leadless Micro8 package and ensure gate drive voltages align with the specified logic-level thresholds for optimal R_DS(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of low-voltage power MOSFETs designed for efficient energy conversion. The NTLTD7900ZR2 utilizes advanced silicon technology to deliver high current density within a small outline, supporting modern trends toward miniaturization in portable and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for equivalent devices from onsemi or other manufacturers offering compatible 20 V, 9 A N-channel MOSFETs in similar packages. Verify pinout compatibility and electrical parameter margins before replacing.

NTLTD7900ZR2NTLTD7900ZR2
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