NTMD6N02R2G

Overview

The NTMD6N02R2G is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a 20 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 5.07 A. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at a gate-source voltage (Vgs) of 4.5 V. Key switching parameters include a total gate charge (Qg) of 12 nC, with typical rise and fall times of 35 ns/50 ns and 60 ns/80 ns, respectively. The component operates within a temperature range of -55°C to +150°C and dissipates up to 2 W of power. It is housed in an SOIC-8 surface-mount package.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact SOIC-8 package for space-constrained designs.
• Low on-resistance characteristic optimized for efficient power handling and reduced conduction losses in low-voltage applications.
• Enhanced thermal performance supporting operation up to a junction temperature of +150°C.

Applications

• DC-to-DC converter circuits
• Power management integrated circuits (PMIC)
• Load switch implementations

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with authorized distributors to validate authenticity and avoid counterfeit components. Ensure the procurement channel provides traceability certificates if required for industrial or automotive qualification processes.

Selection Notes

Select this component when a dual N-channel topology is required within a 20 V system architecture. The 35 mΩ Rds(on) makes it suitable for moderate current loads around 5 A. Compare gate charge values against driving capabilities to ensure adequate switching speed. Verify that the SOIC-8 footprint aligns with existing PCB layout constraints and thermal dissipation requirements.

Part Context

This device belongs to the NTMD6N02 series of dual MOSFETs from onsemi. It shares architectural similarities with other low-voltage power switches designed for portable electronics and computing applications. The series emphasizes high packing density and low profile characteristics to meet modern miniaturization trends in consumer and industrial hardware.

Replacement Considerations

Direct substitutes may include NVMD6N02R2G or NTMD6N03R2G, provided voltage ratings and pin configurations are compatible. Verify electrical parameters such as Rds(on) and Qg before substitution to maintain circuit performance integrity.