NTMD6N04R2G

Overview

The NTMD6N04R2G is a dual N-Channel Power MOSFET from onsemi, housed in an SOIC-8 surface-mount package. It features a drain-to-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 5.8 A at 25°C ambient temperature. The device exhibits ultra-low on-resistance, with typical values of 27 mΩ at VGS = 10 V and 34 mΩ at VGS = 4.5 V. Total gate charge (QT) is typically 20 nC, supporting high-speed switching applications. The integrated body diode is characterized for bridge circuits with a reverse recovery time (trr) of 23 ns. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

• Ultra-low on-resistance design enhances efficiency and extends battery life in low-voltage applications.
• Miniature SOIC-8 surface mount package optimizes board space utilization.
• Integrated body diode features soft recovery characteristics suitable for bridge circuit configurations.

Applications

• DC-DC Converters
• Computers
• Printers
• Cellular and Cordless Phones
• Disk Drives and Tape Drives

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'G' suffix indicates a lead-free package compliant with RoHS standards. Confirm that the procurement documentation matches the exact part number NTMD6N04R2G to ensure correct packaging specifications and material composition. Cross-reference datasheet revision numbers during integration.

Selection Notes

Select this component for designs requiring compact dual N-Channel MOSFETs with low conduction losses. Evaluate thermal resistance parameters against the specific PCB copper pad size, as power dissipation ratings vary significantly between steady-state and transient conditions. Ensure gate drive voltages align with the specified threshold and on-resistance curves for optimal performance.

Part Context

This device belongs to the NTMD6N series of dual N-Channel Power MOSFETs manufactured by onsemi. The series is engineered for low-voltage, high-speed switching environments where board space is constrained. The SOIC-8 package provides a standardized footprint compatible with various automated assembly processes used in consumer electronics manufacturing.

Replacement Considerations

Direct replacements must match the 40V VDSS rating, 5.8A ID capacity, and SOIC-8 pinout configuration. Verify that substitute devices offer comparable RDS(on) values at both 10V and 4.5V gate drives to maintain system efficiency. Check if alternative packages require layout modifications.

FAQ

What is the maximum continuous drain current for this device?

The maximum continuous drain current is 5.8 A at an ambient temperature of 25°C when mounted on an FR4 board using a 1-inch pad size.

How does the gate threshold voltage behave with temperature changes?

The gate threshold voltage has a negative temperature coefficient of approximately -4.7 mV/°C, meaning it decreases as the junction temperature increases.

Is the internal body diode suitable for synchronous rectification?

Yes, the diode is characterized for use in bridge circuits and exhibits high-speed soft recovery with a reverse recovery time of 23 ns.