NTMFS4921NT3G

Single FETs, MOSFETs Overview

The NTMFS4921NT3G is a single N-channel Power MOSFET manufactured by onsemi. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 8.8 A at 25°C, with a pulsed current capability of 58.5 A. The maximum gate-source voltage (Vgs) is rated at ±20 V. It is housed in a compact 5-DFN package (also designated as 8-SOFL), which measures 5x6 mm. This component is designed for high-efficiency power management applications requiring low thermal resistance.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced TrenchFET technology for optimized performance
• Provides low on-resistance to minimize conduction losses
• Features fast switching characteristics for efficient operation
• Designed for surface-mount installation in compact footprints

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management modules
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the 5-DFN package dimensions match your PCB layout requirements. Check for RoHS compliance status and any recent lifecycle notices from onsemi. Ensure that the supplier provides authentic parts with traceable documentation to avoid counterfeit risks during procurement.

Single FETs, MOSFETs Selection Notes

Select this part for designs requiring a 30 V rating with moderate current handling capabilities. The 5-DFN package offers a balance between thermal performance and board space efficiency. Consider the gate charge and threshold voltage specifications when designing the driver circuitry to ensure reliable switching. Evaluate the thermal resistance parameters against your expected operating temperature range and heat dissipation constraints.

Single FETs, MOSFETs Part Context

This component belongs to the NTMFS series of N-channel MOSFETs from onsemi. The series is characterized by the use of TrenchFET technology, which allows for lower on-resistance compared to standard planar devices. These transistors are engineered for general-purpose power switching applications where efficiency and size are critical factors in the system design.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include NTMFS4921NT1G. Other compatible options may include NTMFS4933NT3G or NTMFS4935NBT3G, provided the higher current ratings and similar package types align with the design requirements. Verify pinout compatibility before substitution.