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NTMFS4923NET1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 91A SO-8FL. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4923NET1G
- Description：MOSFET N-CH 30V 91A SO-8FL
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for NTMFS4923NET1G
Single FETs, MOSFETs Overview
The NTMFS4923NET1G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 38.8 A at 25°C ambient temperature, rising to 91 A at case temperature. The device exhibits a low on-resistance of 3.3 mΩ at 10 V gate drive and 4.8 mΩ at 4.5 V. Packaged in an SO-8FL surface-mount format, it supports a junction temperature range from -40°C to +150°C with a power dissipation capacity of up to 48 W at the case level.
Single FETs, MOSFETs Feature Summary
- Low conduction losses achieved through minimized on-resistance across standard gate drive voltages
- Dual-side thermal management capability for effective heat dissipation in high-power applications
- Optimized gate charge characteristics to reduce switching energy and drive requirements
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converter designs requiring low voltage drop
- Power management systems utilizing dual-side cooling substrates
- Automotive electronics operating within specified thermal limits
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against official onsemi documentation prior to integration. Confirm that the specific suffix matches the required tape-and-reel packaging configuration. Ensure design parameters align with the absolute maximum ratings defined in the datasheet to prevent thermal overstress during operation.
Single FETs, MOSFETs Selection Notes
Select this component when circuit topology demands low voltage operation with high current handling capabilities. The dual-side cooling feature makes it suitable for PCBs designed with exposed copper pads or metal core substrates. Evaluate thermal resistance values carefully to ensure adequate heat sinking meets system reliability targets under continuous load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the NTMFS49xxNE series of power MOSFETs from onsemi. These devices are engineered for low-voltage, high-current applications where efficiency and thermal performance are critical. The series utilizes advanced planar technology to achieve superior on-resistance per unit area compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain compatible pinout configurations and thermal interface specifications. Verify that alternative components meet or exceed the original voltage, current, and thermal dissipation requirements.
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