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NTMFS4C09NCT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NFET SO8FL 30V 52A 5.8MOH. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4C09NCT1G
- Description：NFET SO8FL 30V 52A 5.8MOH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.9 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1252 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：760mW (Ta), 25.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：5-DFN (5x6) (8-SOFL)
- Package / Case：8-PowerTDFN, 5 Leads
Single FETs, MOSFETs datasheet and documents for NTMFS4C09NCT1G
Single FETs, MOSFETs Overview
The onsemi NTMFS4C09NCT1G is a discontinued N-channel enhancement mode MOSFET housed in an SO-8FL (DFN5 5x6) surface-mount package. It features a drain-to-source voltage of 30 V and a continuous drain current of 52 A at TC=25°C. The device exhibits a maximum RDS(on) of 5.8 mΩ at VGS=10V and 8.5 mΩ at VGS=4.5V. Total gate charge is 10.9 nC at VGS=4.5V and 22.2 nC at VGS=10V. Operating junction temperature ranges from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low RDS(on) minimizes conduction losses
- Optimized gate charge reduces switching losses
- Low capacitance decreases driver power consumption
Single FETs, MOSFETs Applications
- CPU Power Delivery
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
This component is officially marked as Discontinued by the manufacturer and is not recommended for new designs. Verify availability through secondary channels or contact the supplier directly for legacy support information. Ensure compatibility with existing PCB layouts before procurement, as no direct active replacement is specified in official documentation.
Single FETs, MOSFETs Selection Notes
Select this part only for maintenance or repair of existing equipment where the original design utilized this specific component. Evaluate thermal management requirements carefully, as the SO-8FL package relies heavily on PCB copper area for heat dissipation. Confirm that the 30 V rating and 52 A current capacity meet the system's peak operational demands under worst-case conditions.
Single FETs, MOSFETs Part Context
The NTMFS4C09N belongs to the NTMFS4C09N series of single N-channel power MOSFETs. These devices utilize Trench technology to achieve low on-resistance and fast switching speeds within a compact footprint. The series is designed for high-efficiency power conversion applications requiring robust performance in space-constrained environments.
Single FETs, MOSFETs Replacement Considerations
Official documentation states the device is discontinued and not recommended for new designs. No specific substitute part numbers are provided in the datasheet. Consult onsemi representatives for potential alternatives.
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