NTMFS5H425NLT1G

Single FETs, MOSFETs Overview

The NTMFS5H425NLT1G is a single N-channel enhancement mode power MOSFET manufactured by onsemi using silicon technology. It features a T8 (SO-8FL-4) surface-mount package designed for high-current applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 120 A. The device exhibits a maximum on-state resistance (Rds(on)) of 2.8 mΩ at standard test conditions. Gate specifications define a threshold voltage (Vgs(th)) of 1.2 V, a gate charge (Qg) of 35 nC, and a maximum gate-source voltage (Vgs) range of -20 V to +20 V. Thermal performance includes a power dissipation (Pd) rating of 89 W, with an operating temperature range spanning from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration optimized for low on-state resistance
• T8 (SO-8FL-4) surface-mount package providing robust thermal management capabilities
• High continuous drain current capacity suitable for demanding power switching loads

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring efficient power regulation
• Motor control systems utilizing low-voltage drive signals
• Power distribution units managing high current densities

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before finalizing procurement decisions. Confirm that the SO-8FL-4 package dimensions align precisely with your PCB footprint requirements. Ensure that thermal design calculations account for the specified power dissipation limits under actual operating conditions to prevent overheating.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and 120 A current capability are required in a compact surface-mount form factor. The low Rds(on) value minimizes conduction losses, making it suitable for efficiency-critical designs. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS5H series of power MOSFETs from onsemi, which focuses on delivering high performance in small packages. The series utilizes advanced silicon processes to achieve low on-resistance and fast switching characteristics. The T8 package variant offers a balance between thermal performance and board space efficiency compared to larger traditional packages.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Potential alternatives within the same family include NTMFS5H409NLT1G and NTMFS5H414NLT1G, though parameter differences must be evaluated carefully.