NTMS4706NR2G

$0.25

Description：MOSFET N-CH 30V 6.4A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk

SKU:1251457b15dc Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTMS4706NR2G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 6.4A 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMS4706NR2G

Description：MOSFET N-CH 30V 6.4A 8SOIC
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 24 V
FET Feature：-
Power Dissipation (Max)：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for NTMS4706NR2G

NTMS4706NR2G

Single FETs, MOSFETs Overview

The NTMS4706NR2G is a small signal N-channel MOSFET manufactured by onsemi. It features a 30V drain-source voltage rating and supports a continuous drain current of 6.4A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 12mΩ when driven at 10V with a 10.3A load. Gate threshold voltage is specified at a maximum of 2.5V under 250µA conditions, while gate charge reaches 15nC at 4.5V. Input capacitance measures up to 950pF at 24V. The component operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 830mW.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode metal oxide semiconductor field effect transistor
Surface mount installation in an 8-SOIC package
Wide operating temperature range capability

Single FETs, MOSFETs Applications

General purpose switching applications
Low voltage power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the obsolete status of this component before design finalization. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any replacement parts maintain identical pinout and electrical specifications to avoid circuit redesign. Check for RoHS compliance documentation if required by specific project standards.

Single FETs, MOSFETs Selection Notes

Select this part for low-voltage switching tasks requiring moderate current handling. The 30V rating suits systems with limited headroom. Consider the 12mΩ on-resistance for efficiency calculations. Verify thermal management capabilities given the 830mW dissipation limit in the SOIC-8 package. Evaluate gate drive requirements against the 2.5V threshold specification.

Single FETs, MOSFETs Part Context

This component belongs to the small signal MOSFET category from onsemi. It utilizes silicon technology for standard switching operations. The device is designed for surface mount assembly, facilitating automated PCB placement. It serves as a discrete switching element in electronic circuits where compact form factors are necessary.