NTMSD3P102R2G

Single FETs, MOSFETs Overview

The NTMSD3P102R2G is a P-channel power MOSFET from onsemi, manufactured using FETKY technology. It features an 8-pin SOIC surface-mount package. Key electrical specifications include a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 2.34 A at 25°C case temperature. The device exhibits a maximum on-resistance (R_DS(on)) of 20 mΩ at V_GS = -4.5 V. Additional parameters include a gate threshold voltage range of -0.6 V to -1.5 V, a total gate charge (Q_g) of 7 nC, and a maximum power dissipation of 730 mW.

Single FETs, MOSFETs Feature Summary

• Utilizes FETKY technology for optimized performance in low-voltage applications
• Provides low on-resistance to minimize conduction losses
• Features fast switching characteristics with low gate charge
• Designed for surface-mount assembly in compact electronic circuits

Single FETs, MOSFETs Applications

• Low-side load switching
• Power management integrated circuits (PMICs)
• Battery protection circuits
• DC-DC converter synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm the package type matches the required 8-SOIC footprint and ensure the lead finish complies with RoHS standards. Cross-reference the part number suffix with authorized distributor catalogs to confirm availability and lot traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel MOSFET with a 20 V rating and moderate current handling capability. The low R_DS(on) makes it suitable for efficiency-critical applications. Ensure the gate drive voltage aligns with the specified threshold range for optimal saturation. Consider the thermal constraints imposed by the 730 mW power dissipation limit when designing the PCB layout.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's FETKY family, which focuses on high-performance small-signal and power MOSFETs. The series is engineered to balance low on-resistance with fast switching speeds, addressing the needs of modern portable and industrial electronics. The specific model represents a standard offering within the company's portfolio of single N-channel and P-channel transistors.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or distributor databases for verified substitute part numbers. Ensure any replacement maintains identical pinout configuration, voltage ratings, and current capabilities. Verify that alternative components meet the same package dimensions and thermal requirements to guarantee mechanical and electrical compatibility in existing designs.