NTR3161NT1G

Single FETs, MOSFETs Overview

The NTR3161NT1G is a single N-channel enhancement-mode power MOSFET from onsemi, housed in a compact SOT-23 surface-mount package. It features a drain-source voltage (Vds) rating of 20 V and a continuous drain current (Id) of 4.0 A. The device exhibits a maximum on-resistance (Rds(on)) of 50 mΩ at Vgs = 10 V. Key electrical characteristics include a gate charge (Qg) of approximately 4.7 nC and a forward transconductance minimum of 10.5 S. Operating temperatures range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Compact SOT-23 footprint designed for space-constrained printed circuit board layouts
• Low on-resistance capability supporting efficient power switching with minimal conduction losses
• Enhanced thermal performance allowing operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• Battery protection circuits in portable electronic devices
• Load switching applications in consumer electronics
• Power management modules requiring small form factor solutions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against official onsemi documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the manufacturer's material composition declarations. Ensure the selected variant matches the required voltage and current ratings for the target application design.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current switch is needed in a minimal footprint. The 20 V rating suits single-cell battery systems. Compare Rds(on) and gate charge values against alternative SOT-23 MOSFETs to optimize for efficiency and switching speed. Verify thermal dissipation capabilities within the final enclosure constraints.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of single N-channel power MOSFETs optimized for general-purpose switching. It complements other low-voltage devices in the series, offering a balance between current handling capacity and physical size. The SOT-23 package is standard for low-power discrete semiconductor applications.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout configuration, voltage ratings, and package dimensions to guarantee mechanical and electrical compatibility without redesigning the host circuit.