NTR4170NT1G

Single FETs, MOSFETs Overview

The NTR4170NT1G is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 3.9 A. Its maximum gate-source voltage (Vgs) is rated at ±12 V, with a threshold voltage (Vgs th) of 600 mV. The component exhibits a low on-resistance (Rds On) of 55 mΩ and a gate charge (Qg) of 4.76 nC. Power dissipation is specified at 1.25 W, operating within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for efficient switching control
• Low on-resistance design to minimize conduction losses
• High thermal stability supporting operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• General-purpose power switching applications
• Load management circuits
• DC-DC converter output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix 'T1G' to ensure correct packaging and compliance specifications. Confirm that the required voltage and current ratings align with the circuit design parameters before procurement. Check for RoHS compliance documentation if environmental regulations apply to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with moderate current handling capabilities is required. The SOT-23-3 package suits space-constrained designs. Ensure the application voltage does not exceed the 30 V rating and that thermal management accommodates the 1.25 W dissipation limit under expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the NTR4170N series of small-signal MOSFETs from onsemi. It is designed for general electronic applications requiring reliable switching performance in a standard surface-mount footprint. The product line focuses on balancing electrical performance with physical size constraints typical of consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data or manufacturer substitution guides for verified equivalent parts. Do not assume compatibility based solely on package type or generic channel configuration without verifying specific electrical parameters.