NTSJ20120CTG

Overview

The NTSJ20120CTG is a Trench-based Schottky rectifier manufactured by onsemi, housed in a TO-220FP package. It features dual common cathode configuration with a peak repetitive reverse voltage of 120 V and an average rectified forward current of 20 A per device (10 A per diode). The component exhibits exceptionally low forward voltage, reaching 0.54 V at 5 A and 25°C junction temperature. Maximum thermal resistance from junction to case is 4.42 °C/W per diode, supporting high surge capability up to 120 A.

Feature Summary

• Utilizes fine lithography trench-based Schottky technology for very low forward voltage and reduced leakage current.
• Provides fast switching performance with exceptional temperature stability across the operating range.
• Features low thermal resistance and high surge capability to minimize power loss and lower operating temperatures.

Applications

• Switching power supplies including notebook and netbook adapters
• ATX and flat panel display power systems
• High frequency and DC-DC converters
• Freewheeling and OR-ing diodes
• Reverse battery protection circuits

Procurement Notes

Verify the specific ordering suffix 'J' corresponds to the halide-free TO-220FP package variant as defined in the manufacturer's ordering information table. Confirm that the procurement documentation explicitly references the NTSJ20120CTG part number to ensure correct package selection distinct from standard TO-220AB or D2PAK variants within the same electrical family.

Selection Notes

Select this component when a through-hole mounting solution with enhanced thermal dissipation via the TO-220FP case is required. The halide-free material specification makes it suitable for applications adhering to strict chemical composition standards. Ensure the design accommodates the 120 V reverse voltage rating and utilizes the low forward voltage characteristics to maximize efficiency in high-frequency switching environments.

Part Context

This device belongs to the NTSx20120CT series of very low forward voltage Schottky barrier rectifiers. It shares identical electrical ratings with the NTST20120CTG, NTSB20120CT-1G, NTSB20120CTG, and NTSB20120CTT4G models. The primary distinction lies in the mechanical packaging, where the NTSJ20120CTG specifically utilizes the TO-220FP form factor with halide-free epoxy molding compound.

Replacement Considerations

Direct substitutes include NTST20120CTG, NTSB20120CT-1G, NTSB20120CTG, and NTSB20120CTT4G. Note that these alternatives utilize different packages such as TO-220AB, I2PAK, or D2PAK. Verify mechanical fit and thermal interface requirements before substituting, as the TO-220FP package dimensions differ from the other listed variants.

FAQ

What is the maximum thermal resistance from junction to case for the NTSJ20120CTG?

The maximum thermal resistance from junction to case is 4.42 °C/W per diode.

Does the NTSJ20120CTG use halide-free materials?

Yes, the NTSJ20120CTG is specified as a halide-free device according to the ordering information section.

What is the typical instantaneous forward voltage at 5 A and 25°C?

The typical instantaneous forward voltage is 0.62 V at an forward current of 5 A and a junction temperature of 25°C.