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The NTST30U100CTH is a very low forward voltage, trench-based Schottky barrier rectifier manufactured by onsemi. It features a 100 V repetitive peak reverse voltage rating and an average rectified forward current of 30 A per device (15 A per diode). The component utilizes fine lithography trench technology to achieve exceptionally low forward voltage and leakage current. It operates within a junction temperature range of -40°C to +150°C and provides high surge capability with a nonrepetitive peak surge current of 160 A.
Verify the specific ordering suffix 'H' indicates a halide-free package configuration as documented in the manufacturer's ordering information table. Confirm that the TO-220AB case style matches the required mechanical footprint. Ensure compliance with UL 94-0 flammability ratings for epoxy molding compounds during integration.
Select this component when low forward voltage drop and high efficiency are critical for thermal management in power conversion circuits. The dual-diode configuration allows for independent circuit paths within a single package. Verify that the 100 V blocking voltage aligns with the maximum operating reverse voltage of the target application environment.
This part belongs to the NTSx30U100CT family of very low forward voltage Schottky barrier rectifiers. It shares core electrical characteristics with variants such as NTST30U100CTG and NTSB30U100CT-1G, differing primarily in packaging materials and environmental compliance specifications like halide content.
Direct substitutes include NTST30U100CTG and NTSJ30U100CTG, which share identical electrical ratings and pin configurations but differ in package material specifications.
The typical instantaneous forward voltage is 0.47 V at an ambient temperature of 25°C and a forward current of 5 A.
At a junction temperature of 125°C and a forward current of 5 A, the typical instantaneous forward voltage decreases to 0.42 V.
The maximum thermal resistance from junction to case is 2.5 °C/W for the TO-220AB package variant.