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NTTFS4H07NTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 18.5A/66A 8WDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTTFS4H07NTWG
- Description：MOSFET N-CH 25V 18.5A/66A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：18.5A (Ta), 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：771 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.64W (Ta), 33.8W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-WDFN (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for NTTFS4H07NTWG
Single FETs, MOSFETs Overview
The NTTFS4H07NTWG is a single N-channel power MOSFET from onsemi, designed for surface-mount applications. It features a Drain-Source Voltage (Vds) of 25 V and a continuous Drain Current (Id) of 18.5 A. The device exhibits a maximum Drain-Source On-State Resistance (Rds(on)) of 4800 µΩ. It is housed in a WDFN8 package, specifically the µ8-FL footprint, with dimensions of 3.3x3.3 mm. The component is lead-free and RoHS compliant.
Single FETs, MOSFETs Feature Summary
- Single N-channel power MOSFET configuration
- Surface-mount WDFN8 packaging
- Lead-free and RoHS compliant construction
Single FETs, MOSFETs Applications
- General purpose power switching
- Low voltage DC-DC conversion stages
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the WDFN8 footprint aligns with your PCB design guidelines. Check current manufacturing status as availability may vary. Ensure compliance with local tariff regulations if shipping to restricted regions. Validate thermal management strategies for the small form factor.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage, high-current solution is required in a compact surface-mount package. The 25 V rating suits systems operating within this voltage headroom. Consider the 4800 µΩ Rds(on) for efficiency calculations at the target load current. The WDFN8 package offers a balance between thermal performance and board space savings compared to larger packages.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's portfolio of single N-channel MOSFETs. It is distinct from other variants like the NTTFS4H05NTWG, which shares the same package but differs in electrical specifications. The µ8-FL designation refers to the specific thermal pad layout of the WDFN8 package, optimizing heat dissipation through the bottom exposed pad.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 25 V Vds, ~4.8 mΩ Rds(on), and WDFN8 footprint. Verify pinout compatibility and thermal characteristics before substitution.
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