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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.54A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA, 430mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3155CT5G is a dual N-channel and P-channel MOSFET manufactured by onsemi, housed in a compact SOT-563 surface-mount package. This component integrates two independent transistors within a single footprint to optimize board space. The device features a maximum drain-source voltage rating of 20V for both channels. It supports a continuous drain current of 540mA. The integrated design facilitates efficient power management in portable electronics.
Feature Summary
- Dual configuration combining one N-channel and one P-channel MOSFET
- Compact SOT-563 surface-mount packaging for space-constrained designs
- RoHS compliant and halogen-free construction
Applications
- Portable consumer electronics battery protection circuits
- Power management systems in mobile devices
- Load switching applications requiring dual polarity control
Procurement Notes
Verify the specific ordering suffix against official onsemi documentation to confirm tape-and-reel quantities and packaging specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a dual N/P-channel configuration is required in a minimal footprint. Verify that the 20V voltage rating and 540mA current capacity meet the circuit's operational demands. Consider the thermal characteristics of the SOT-563 package relative to the expected power dissipation in the target application environment.
Part Context
This part belongs to onsemi's portfolio of small-signal MOSFETs designed for low-voltage applications. The NTZD series utilizes advanced silicon technology to provide high performance in a tiny package. It serves as a solution for integrating multiple switching functions into compact electronic devices.
Replacement Considerations
Consult official substitution guides for compatible dual MOSFETs in SOT-563 packages. Verify pinout compatibility and electrical parameters such as Rds(on) and threshold voltage before replacing.
