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NV6115 is listed in the Power Driver Modules range at ChipApex. The manufacturer field lists Navitas Semiconductor, Inc.. Its product description is IC PWR GANFAST N-CH 1:1 8QFN. Review the specifications below when checking this part for your BOM.
The NV6115 is a single half-bridge GaNFast power IC from Navitas Semiconductor, integrating a 650 V enhancement-mode GaN FET with an integrated gate driver and logic circuit. It features a nominal on-resistance of 170 mΩ and supports a supply voltage range of 10 V to 24 V. The device operates within a temperature range of -40 °C to +125 °C and utilizes an 8-PowerVDFN (5x6 mm) surface-mount package.
Verify the specific ordering suffix when purchasing, as variants such as NV6115-RA exist. Confirm that the component meets RoHS3 and REACH standards. Check manufacturer documentation for moisture sensitivity levels and recommended soldering profiles to ensure proper handling during assembly.
Select this component for designs requiring high power density and simplified gate drive requirements. The integrated nature reduces external component count compared to discrete solutions. Ensure the application topology supports the device's high-frequency capabilities and that thermal management aligns with the small form factor constraints.
The NV6115 belongs to the GaNFast family, which focuses on integrating power switching and control functions. This approach aims to replace traditional silicon MOSFETs and separate drivers, enabling smaller, lighter, and more efficient power supplies across various consumer and industrial electronics applications.
Publicly confirmed substitute part numbers are not available in the provided source material.
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