NV6117-RA

Power Driver Modules Overview

The NV6117-RA is a monolithic GaNFast power IC featuring an integrated 650 V eMode GaN FET with 120 mΩ on-resistance. It combines the power switch, gate driver, and control logic in a single PQFN-5x6-8 package (5 mm x 6 mm footprint, 0.85 mm height). The device supports digital input control with wide logic input range and hysteresis, compatible with 5 V and 15 V inputs. Operating voltage ranges from 10 V to 30 V. It offers programmable turn-on dV/dt and high dV/dt immunity of 650 V/ns. Designed for frequencies up to 2 MHz, it minimizes parasitic inductance for efficient soft-switching topologies.

Power Driver Modules Feature Summary

• Monolithic integration of 650 V eMode GaN FET, gate driver, and logic control
• High dV/dt immunity rated at 650 V/ns with programmable turn-on slew rate
• Digital input compatibility with 5 V and 15 V logic levels and built-in hysteresis
• Low-inductance 5 mm x 6 mm SMT QFN package optimized for high-frequency operation

Power Driver Modules Applications

• AC/DC and DC/DC converters including buck, boost, half-bridge, and full-bridge topologies
• Active clamp flyback and LLC resonant power supplies
• Mobile fast chargers and laptop adapters
• LED lighting drivers and solar microinverters
• Class D audio amplifiers and wireless power systems

Power Driver Modules Procurement Notes

Verify the specific suffix designation against official Navitas Semiconductor documentation to confirm exact electrical tolerances and thermal characteristics. Confirm RoHS compliance status through current datasheets. Ensure ESD handling protocols are followed due to the sensitivity of the GaN technology. Validate that the PQFN-5x6-8 footprint matches the target PCB layout requirements before finalizing procurement orders.

Power Driver Modules Selection Notes

Select this component for designs requiring high power density and efficiency in compact form factors. The integrated nature reduces external component count compared to discrete solutions. Consider the 120 mΩ resistance for conduction loss calculations. The wide operating temperature range supports industrial applications. Evaluate the 2 MHz switching capability against electromagnetic interference constraints in the target system environment.

Power Driver Modules Part Context

This part belongs to the GaNFast series from Navitas Semiconductor, representing a class of monolithic power ICs that integrate enhancement-mode Gallium Nitride transistors with dedicated drive circuitry. The NV6117 variant specifically targets general-purpose high-frequency power conversion needs, offering a balance between low on-resistance and robust switching performance within a standard surface-mount package format.

Power Driver Modules Replacement Considerations

NV6117 is the base part number; -RA indicates the reel packaging configuration. No direct cross-manufacturer substitutes are verified in the provided data.