NV6134A

Power Driver Modules Overview

The NV6134A is a GaNSense single half-bridge power integrated circuit manufactured by Navitas Semiconductor. It integrates a high-performance mode Gallium Nitride (GaN) field-effect transistor with an integrated gate driver and precision lossless current sensing circuitry. The device features a 700V breakdown voltage, a typical on-resistance of 260mΩ, and supports switching frequencies up to 2MHz. It is housed in a compact PQFN-6x8-30 surface-mount package designed for thermal efficiency. Operating temperatures range from -40°C to +125°C.

Power Driver Modules Feature Summary

• Integrates GaNSense technology for real-time, accurate sensing of voltage, current, and temperature without external sampling resistors.
• Combines a high-performance mode GaN FET with an integrated gate driver to enable high-frequency operation and reduced component count.
• Features a compact 6x8mm QFN package optimized for high power density designs.

Power Driver Modules Applications

• High-power-density USB Power Delivery (PD) fast chargers
• Multi-port travel adapters
• Mobile device charging solutions

Power Driver Modules Procurement Notes

Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before finalizing procurement. Confirm that the component status aligns with design requirements, as availability may be restricted for new designs. Ensure compatibility with existing PCB footprints and thermal management strategies during the sourcing phase.

Power Driver Modules Selection Notes

Select this component for applications requiring high power density and simplified bill of materials due to integrated driver and sensing capabilities. Evaluate the 700V rating against system voltage requirements and ensure the 260mΩ on-resistance meets efficiency targets. Consider the PQFN-6x8-30 package constraints for thermal dissipation in enclosed spaces.

Power Driver Modules Part Context

The NV6134A belongs to the GaNSense family of power ICs from Navitas Semiconductor. This series combines silicon control logic with gallium nitride power switches to improve performance over discrete solutions. The device is part of the broader GaNFast portfolio aimed at replacing traditional silicon MOSFETs in high-frequency power conversion applications.

Power Driver Modules Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if variants such as NV6134C or NV6134A-RA offer equivalent electrical characteristics and pinouts for potential cross-referencing.