NV6152

Power Driver Modules Overview

The NV6152-RA is a single half-bridge integrated circuit from the GaNFast family, manufactured by Navitas Semiconductor. It features an integrated Gallium Nitride (GaN) power switch with a breakdown voltage of 650V and a typical on-resistance of 450mΩ. The device is housed in a PQFN 5x6 package with 24 terminals. It operates within a temperature range of -40°C to +125°C junction temperature. The component integrates gate drive capabilities and protection features suitable for high-frequency power conversion applications.

Power Driver Modules Feature Summary

• Integrates a 650V GaN power switch with low on-resistance for efficient power handling.
• Includes built-in gate driver and control logic for simplified system design.
• Features compact surface-mount packaging for high-density PCB layouts.

Power Driver Modules Applications

• High-efficiency AC/DC adapters
• Server and data center power supplies
• Battery charging systems

Power Driver Modules Procurement Notes

Verify the specific suffix '-RA' against the manufacturer's datasheet to confirm package and tape-and-reel specifications. Confirm RoHS compliance status as listed in official documentation. Check for 'Not Recommended for New Design' (NRND) status if applicable to current production cycles. Ensure ESD handling procedures are followed during assembly due to moisture sensitivity classification.

Power Driver Modules Selection Notes

Select this component when a single half-bridge configuration with 650V rating is required. Compare the 450mΩ on-resistance against thermal management requirements. Evaluate the PQFN 5x6 footprint against available board space. Consider the operating temperature range for environmental constraints. Verify compatibility with existing gate drive voltages and control signals.

Power Driver Modules Part Context

The NV6152 belongs to Navitas Semiconductor's GaNFast series, which combines gallium nitride power switches with intelligent gate drivers. This integration reduces component count and improves power density compared to discrete silicon solutions. The series targets applications demanding high efficiency and fast switching speeds in compact form factors.

Power Driver Modules Replacement Considerations

Consult the official Navitas Semiconductor cross-reference guide or datasheet for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without detailed electrical parameter comparison. Verify pinout compatibility and thermal characteristics before substitution.

Power Driver Modules FAQ

What is the maximum junction temperature for the NV6152?

The maximum operating junction temperature is +125°C.

Does the NV6152 include a gate driver?

Yes, the device integrates a gate driver with the GaN power switch.

What is the package type for the NV6152-RA?

The NV6152-RA uses a PQFN 5x6 package with 24 pins.