NVBG030N120M3S

Single FETs, MOSFETs Overview

The NVBG030N120M3S is a silicon carbide (SiC) MOSFET manufactured by onsemi, belonging to the EliteSiC M3S series. It features an N-channel configuration housed in a D2PAK-7L surface-mount package. The device is rated for a drain-source breakdown voltage of 1.2 kV and offers a maximum continuous drain current of 85 A. Its typical on-resistance is specified at 30 mΩ. The component supports gate-source voltages ranging from -10 V to +22 V and operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes onsemi's M3S planar technology optimized for fast switching applications.
• Features a Kelvin source configuration within the D2PAK-7L package for improved thermal performance and switching reliability.
• Designed with robust negative gate voltage tolerance to prevent false turn-on during high dv/dt events.

Single FETs, MOSFETs Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides traceability to the original equipment manufacturer. Confirm RoHS compliance status and lead times directly with authorized distributors prior to placing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high-temperature operation in power conversion circuits. Evaluate the trade-off between the 30 mΩ on-resistance and the associated gate charge requirements for the driver circuit. Ensure the PCB layout accommodates the D2PAK-7L footprint and thermal dissipation needs for the intended current load.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's EliteSiC portfolio, which integrates advanced silicon carbide materials for superior efficiency compared to traditional silicon devices. The M3S generation specifically targets improvements in figure-of-merit metrics, offering lower switching energy losses while maintaining rugged avalanche capabilities for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for direct replacements. Verify that any substitute device matches the 1200V rating, D2PAK-7L package dimensions, and electrical characteristics such as Rds(on) and threshold voltage to ensure circuit compatibility.