Single FETs, MOSFETs NVD5C464NLT4G product image

NVD5C464NLT4G

$2.01
  • Description:T6 40V DPAK EXPANSION AND
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:eacde4018805 Category: Brand:

  
  • Quantity
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NVD5C464NLT4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is T6 40V DPAK EXPANSION AND. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVD5C464NLT4G

  • Description:T6 40V DPAK EXPANSION AND
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for NVD5C464NLT4G

NVD5C464NLT4G

Single FETs, MOSFETs Overview

The NVD5C464NLT4G is a single N-channel power MOSFET from onsemi, housed in a DPAK (TO-252) surface-mount package. It features a maximum drain-to-source voltage of 40 V and a continuous drain current of 64 A at TC = 25°C. The device exhibits a low on-resistance of 5.2 mΩ at VGS = 10 V and 7.7 mΩ at VGS = 4.5 V. Total gate charge is 27 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to 175°C and includes an integrated body diode with a forward voltage of 1.2 V.

Single FETs, MOSFETs Feature Summary

  • Low RDS(on) minimizes conduction losses for improved efficiency.
  • Low QG and capacitance reduce driver losses and switching energy.
  • AEC-Q101 qualified and PPAP capable for automotive reliability.

Single FETs, MOSFETs Applications

  • Automotive electronic systems
  • Power management circuits
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T4G' corresponds to the tape and reel shipping configuration of 2,500 units per reel. Confirm that the component meets RoHS compliance standards and is lead-free. Ensure the application environment supports the specified thermal resistance values and operating temperature ranges defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and high current handling capability are required in a compact surface-mount form factor. Consider the thermal performance and heat dissipation requirements based on the junction-to-case thermal resistance. Evaluate the gate drive voltage compatibility with the specified threshold and total gate charge parameters.

Single FETs, MOSFETs Part Context

This part belongs to the NVD5C464NL series of N-channel enhancement mode MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for general-purpose power switching applications requiring robust performance and automotive-grade qualification.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or distributor databases for verified substitute part numbers. Ensure any replacement matches the electrical ratings, pinout configuration, and package dimensions before implementation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 340 A at TA = 25°C with a pulse width of 10 µs.

Is the device suitable for automotive use?

Yes, the device is AEC-Q101 qualified and PPAP capable.

NVD5C464NLT4GNVD5C464NLT4G
$2.01
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