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NVF2955T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 60V 2.6A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NVF2955T1G
- Description：MOSFET P-CH 60V 2.6A SOT223
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：170mOhm @ 750mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：492 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223 (TO-261)
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for NVF2955T1G
Single FETs, MOSFETs Overview
The NVF2955T1G is a P-channel power MOSFET manufactured by onsemi, designed for automotive and general power management applications. It features a -60V drain-source voltage rating and supports a continuous drain current of 2.6A. The device utilizes a SOT-223 surface-mount package to facilitate efficient thermal dissipation in compact designs. Key electrical specifications include a maximum gate-source voltage of ±20V and a power dissipation capacity of 2.3W at 25°C ambient temperature. The component is AEC-Q101 qualified, ensuring reliability for automotive environments.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive application reliability
- Robust design with large Safe Operating Area (SOA)
- SOT-223 surface-mount package for high power density
Single FETs, MOSFETs Applications
- Automotive power management systems
- DC/DC converters
- Low-power automotive circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix T1G confirms the tape-and-reel packaging configuration required for automated assembly processes. Confirm that the AEC-Q101 qualification status meets the specific reliability standards mandated by the target automotive or industrial end-application before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel MOSFET with a 60V rating and approximately 2.6A continuous current capability is required in a SOT-223 footprint. Ensure the application operates within the specified junction temperature limits and that the gate drive voltage aligns with the threshold characteristics for optimal RDS(on) performance.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's portfolio of automotive-grade power MOSFETs. It is engineered using trench technology to achieve low on-resistance and efficient switching. The SOT-223 package provides a balance between thermal performance and board space efficiency, making it suitable for dense PCB layouts in consumer and automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the P-channel type, 60V VDS, and SOT-223 package. Verify pinout compatibility and thermal resistance values. Cross-reference with other AEC-Q101 qualified P-channel MOSFETs from onsemi or other manufacturers if exact pin-for-pin replacement is necessary.
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