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NVGS3130NT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 20V 4.2A 6TSOP. Review the specifications below when checking this part for your BOM.
The NVGS3130NT1G is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5.6 A. The device exhibits a low on-resistance of 24 mΩ at a gate-source voltage of 4.5 V. It is housed in a TSOP-6 surface-mount package with dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height. The component operates within a temperature range of -55 °C to +150 °C junction temperature and has a typical gate charge of 13.2 nC at 4.5 V.
Verify the specific ordering suffix and manufacturer part number against official onsemi documentation to ensure correct specifications. Confirm that the received components match the required AEC-Q101 automotive qualification status. Check datasheet revisions for any updates to electrical characteristics or packaging details before integration into final designs.
Select this component for applications requiring a 20 V N-channel MOSFET with automotive certification. The 5.6 A current rating and 24 mΩ on-resistance make it suitable for low-voltage power management. Ensure the TSOP-6 footprint aligns with the PCB layout constraints and thermal requirements of the target system.
This part belongs to the NVGS3130N series of N-channel MOSFETs from onsemi. These devices are designed for general-purpose switching applications, particularly where space efficiency and automotive reliability are prioritized. The TSOP-6 package provides a compact solution for modern electronic designs.
Yes, the component is AEC-Q101 qualified, indicating compliance with automotive electronics standards.
The maximum operating junction temperature is +150 °C.
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