NVJD4401NT1G

Overview

The NVJD4401NT1G is a dual N-channel enhancement-mode small-signal MOSFET manufactured by onsemi. It features an isolated transistor configuration within a surface-mount SC-88 package containing six pins. The device supports a maximum continuous drain current of 630 mA and withstands a maximum drain-source voltage of 20 V. Key electrical parameters include a maximum drain-source resistance of 445 mΩ, a typical gate charge of 1.3 nC at 4.5 V, and a maximum power dissipation of 550 mW. The component operates reliably across a temperature range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel architecture providing two independent switching elements in a single compact package
• Enhanced mode operation optimized for low-voltage signal switching applications
• Automotive-grade qualification ensuring reliability under rigorous environmental conditions

Applications

• Automotive electronic systems requiring AEC-Q101 qualified components
• Low-voltage signal switching circuits in consumer electronics
• Battery management system protection interfaces

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure that the procurement channel provides valid traceability records consistent with automotive-grade quality standards. Cross-reference the part number with the latest datasheet revisions to confirm compliance with current RoHS directives and material declarations before finalizing purchase orders.

Selection Notes

Select this component when a dual N-channel configuration is required within a minimal footprint constraint. The 20 V rating suits low-voltage logic interfacing, while the 630 mA current capacity supports moderate load switching. Verify that the 445 mΩ on-resistance meets the thermal and efficiency requirements of the target application circuit design.

Part Context

This component belongs to onsemi's NVJD series of automotive-grade small-signal MOSFETs. The series is designed specifically for high-reliability applications where space optimization and robust performance are critical. The NVJD4401NT1G variant offers higher current handling compared to lower-rated siblings in the same package family.

Replacement Considerations

Direct pin-compatible substitutes may include other automotive-grade dual N-channel MOSFETs in SC-88 packages with comparable 20 V ratings and similar on-resistance values. Verify functional equivalence through detailed parameter comparison against the original datasheet specifications.