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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.295A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：295mA (Ta)
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：26pF @ 20V
- Power - Max：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The NVJD5121NT1G-M06 is a dual N-channel RF MOSFET transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-88 surface-mount package. The device features a drain-source voltage rating of 60V and a continuous drain current of 295mA. Its on-resistance is specified at 1.6 ohms. This component is classified as an RF power MOSFET within the NVJD5121N series, designed for radio frequency applications requiring compact packaging and specific electrical characteristics.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for radio frequency power switching applications
- Silicon-based construction for reliable semiconductor performance
Applications
- RF power amplification circuits
- Radio frequency signal processing modules
- Compact RF switch implementations
Procurement Notes
Verify the complete part number including the M06 suffix against official onsemi documentation to confirm specific tape-and-reel or cut-tape variations. Ensure the SC-88 package footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.
Selection Notes
Select this component when a dual N-channel RF MOSFET with 60V breakdown and low on-resistance is required in an SC-88 package. Compare the 295mA current rating against circuit load requirements. Verify that the 1.6 ohm on-resistance meets thermal and efficiency constraints for the intended RF application environment.
Part Context
This part belongs to the NVJD5121N series of dual N-channel power MOSFETs from onsemi. The series focuses on RF power applications. The NVJD5121NT1G is the standard reel variant, while the M06 suffix indicates specific packaging or ordering details defined by the distributor or manufacturer for this specific batch configuration.
Replacement Considerations
Consult onsemi documentation for direct cross-reference candidates within the NVJD5121N family. Verify pin compatibility and electrical parameters such as Vds and Rds(on) before substituting with other dual N-channel RF MOSFETs from different manufacturers.
