NVMFD5483NLWFT1G

Overview

The NVMFD5483NLWFT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO8FL) surface-mount package. It features a drain-to-source voltage of 60 V and a continuous drain current of 24 A at TC = 25°C. The device exhibits a maximum on-resistance of 36 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V. Total gate charge is typically 23.4 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to 175°C and meets AEC-Q101 qualification standards.

Feature Summary

• Dual configuration with low on-resistance for minimized conduction losses
• Low capacitance characteristics to reduce driver losses
• Wettable flank option available for enhanced optical inspection
• AEC-Q101 qualified and PPAP capable for automotive reliability

Applications

• Automotive power management systems
• Compact electronic designs requiring small footprints
• High-efficiency power conversion circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and wettable flank availability. Confirm that the component meets all required automotive quality standards before integration into final assemblies.

Selection Notes

Select this component when a dual N-channel MOSFET with a 60 V rating and compact DFN8 footprint is required. Ensure the application supports the specified thermal resistance values and gate drive voltages for optimal performance.

Part Context

This part belongs to the NVMFD5483NL series of dual N-channel power MOSFETs. It shares the same electrical specifications as the standard NVMFD5483NL variant but includes specific packaging or marking variations indicated by the suffix.

Replacement Considerations

Direct replacements include NVMFD5483NLT1G and NVMFD5483NLWFT3G. Verify pinout compatibility and electrical ratings before substitution.