NVMFD5485NLWFT1G

Overview

The NVMFD5485NLWFT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a 60V drain-source voltage rating and supports a continuous drain current of 20A. The device exhibits a low on-resistance of 33mΩ at 10V gate drive. Packaged in an 8-lead DFN (4.9x5.9mm) surface-mount format, it operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• Dual N-channel configuration for efficient half-bridge or synchronous rectification applications
• Low on-resistance design minimizes conduction losses and thermal generation
• Enhanced thermal performance via exposed pad DFN package with wettable flanks

Applications

• Automotive power distribution systems
• Synchronous buck converter topologies
• Motor control driver circuits

Procurement Notes

Verify the specific suffix WFT1G against the official datasheet to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 automotive qualification requirements if deployed in vehicle electronics. Cross-reference the manufacturer part number with authorized distributor catalogs to prevent counterfeit procurement.

Selection Notes

Select this component when a compact dual MOSFET solution is required for 60V DC bus architectures. The low Rds(on) makes it suitable for high-current loads where thermal management is critical. Evaluate the DFN footprint compatibility against existing PCB layout constraints before finalizing the design.

Part Context

This part belongs to the NVMFD5485NL series of automotive-grade power MOSFETs. It is designed for robust performance in harsh electrical environments typical of modern automotive and industrial applications. The series emphasizes high reliability and thermal stability.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs from onsemi with matching 60V ratings and similar pinout configurations. Verify that alternative parts meet the same AEC-Q101 standards and thermal dissipation capabilities.